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2SA1930(Q,M)


Part Number 2SA1930(Q,M)
Zouser Part # 2SA1930-Q-M
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS PNP 180V 2A TO220NIS
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SA1930(Q,M) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock319 - More on Order
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2SA1930(Q,M) Specifications

Part Number 2SA1930(Q,M)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type PNP
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 180V
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Current - Collector Cutoff (Max) 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Power - Max 2W
Frequency - Transition 200MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS

2SA1930(Q,M) Documents

2SA1930(Q, 2SA1930(Q Datasheet (Total Pages: 5, Size: 138.32 KB)
2SA1930 Datasheet Cover2SA1930 Datasheet Page 22SA1930 Datasheet Page 32SA1930 Datasheet Page 42SA1930 Datasheet Page 5

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