Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Total Parts | 30/60 |
| Manufacturers | Texas Instruments, Fagor Electronica, EIC Semiconductor, Inc., Eris Technology Corporation, Ricoh Co., Ltd, PanJIT Semiconductor, Vishay Semiconductor GmbH, Torex Semiconsuctor Ltd., ON Semiconductor, Comchip Technology Corporation, Renessas (Hitachi and Mitsubishi) Ltd., Korea Electronics Co. Ltd, Rohm Co., Ltd., Diodes Inc., Panasonic (Matsushita) Electronics Corp., Philips GmbH, Bourns, Inc., NEC Electronics Inc. (Nippon Electrical Company), Ruilong Yuan Electronics |
| Functions | Capacitance Diode (Varactor, Varicap), Zener Diode, P-Channel MOSFET, Transient Voltage supressor, ElectroStatic Discharge Protection Diode, Silicon PNP Transistor, Linear Voltage Regulator Integrated Circuit, Silicon Diode, Voltage Detector Integrated Circuit, Silicon PNP Digital Transistor, Voltage Reference Integrated Circuit |
| Cases | SC-70, SOD-323, SOT-523, DO-215AA, SOD-123, SMF, SSOT-24, DO-214AA, VSM, 403A, SOT-23, SOT-89, SOD-106, SC-82AB, SOT-323, SOD-123FL, SSOP-3, SOT-490 |
| Pins | 16vda, 18ta, 26cr, 16ta, 26yr, 26vn, 7d, 20fa, 5d, 1ba, 3d, 1d, 16dc, 5ba, 7ba, 16dk |
| Description |
Vrwm=110V, 3.4A, 600W(1ms) 122.0..140.50V, Zzt=375Ω, Izt=5.8mA, 3W Mobile Comm, VCO, 10V, 20mA, 24.5..45.2pF(2.82..0.34V) Vrwm=110V, Irsm=3.4A, 600W(1ms) SBR, HF, 90V, 800mA, Vf<0.8V(700mA), 50pF, 100ns SBR, HF, 90V, 800mA, Vf<0.8V(700mA), 50pF, 100ns Vrwm=6.8V, Vbr=6.45..7.14V, 57.1A, 600W(1ms), Bidir. Vrwm=110V, Vbr=105..116V, 4A, 600W(1ms) Vrwm=110V, Vbr=122..154.5V, 3.0A, 600W(1ms) Vrwm=110V, Vbr=122..154.5V, 3.0A, 600W(1ms) Vrwm=110V, Vbr=122..154.5V, 3.0A, 600W(1ms) Vrwm=110V, Vbr=122..135V, 1.0A, 200W(1ms) Vrwm=110.0V, Vbr=122.0..135.0V, 1.13A, 200W(10/1000µs), Bidir. Vbr=28.9V, Vrwm=26V, Ipp=4.8A, 200W(1ms) Vrwm=110V, Vbr=122..135V, Ipp=1.13A, 200W(1ms), Bidir. Vrwm=110.0V, Vbr=122.0..135.0V, Ipp=3.39A, 600W(1ms) 4.3V±1%, -Reset PPO, Td=400ms AF, 90V, 50mA, 150mW, B=400..800, 200MHz 37..41V, Zzt=130Ω, Izt=5mA, 150mW 39.0..41.0V, Zzt=130Ω, Izt=2mA, 150mW |
| SMD Code | A | Part Number | Manufacturer | Case | Pin | Description | |
|---|---|---|---|---|---|---|---|
| PE | - | 1SMB110A | Ons | 403A | 3d | Transient Voltage supressor Vrwm=110V, 3.4A, 600W(1ms) |
|
| PE | - | 3.0SMB130A | Rul | DO-214AA | 1d | Zener Diode 122.0..140.50V, Zzt=375Ω, Izt=5.8mA, 3W |
|
| PE | - | BB155 | Phi | SOD-323 | 5d | Capacitance Diode (Varactor, Varicap) Mobile Comm, VCO, 10V, 20mA, 24.5..45.2pF(2.82..0.34V) |
|
| PE | - | CD214B-T110A | Brn | DO-214AA | 1d | Transient Voltage supressor Vrwm=110V, Irsm=3.4A, 600W(1ms) |
|
| PE | - | MA2Q739 | Pan | SOD-106 | 1d | Silicon Diode SBR, HF, 90V, 800mA, Vf<0.8V(700mA), 50pF, 100ns |
|
| PE | - | MA739 | Pan | SOD-106 | 1d | Silicon Diode SBR, HF, 90V, 800mA, Vf<0.8V(700mA), 50pF, 100ns |
|
| PE | - | P6SMB6V8CA | Fag | DO-214AA | 1ba | Transient Voltage supressor Vrwm=6.8V, Vbr=6.45..7.14V, 57.1A, 600W(1ms), Bidir. |
|
| PE | - | P6SMBJ110A | Pjt | DO-214AA | 1d | Transient Voltage supressor Vrwm=110V, Vbr=105..116V, 4A, 600W(1ms) |
|
| PE | - | SMBG110A | Vs | DO-215AA | 5d | Transient Voltage supressor Vrwm=110V, Vbr=122..154.5V, 3.0A, 600W(1ms) |
|
| PE | - | SMBJ110A | Vs | DO-214AA | 1d | Transient Voltage supressor Vrwm=110V, Vbr=122..154.5V, 3.0A, 600W(1ms) |
|
| PE | - | SMBJ110A | Di | DO-214AA | 1d | Transient Voltage supressor Vrwm=110V, Vbr=122..154.5V, 3.0A, 600W(1ms) |
|
| PE | - | SMF110A | Eic | SOD-123FL | 7d | Transient Voltage supressor Vrwm=110V, Vbr=122..135V, 1.0A, 200W(1ms) |
|
| PE | - | SMF110CA | Ers | SOD-123FL | 7ba | Transient Voltage supressor Vrwm=110.0V, Vbr=122.0..135.0V, 1.13A, 200W(10/1000µs), Bidir. |
|
| PE | - | SMF26A-M | Vs | SMF | 7d | ElectroStatic Discharge Protection Diode Vbr=28.9V, Vrwm=26V, Ipp=4.8A, 200W(1ms) |
|
| PE | - | TV02W111B-G | Cmc | SOD-123 | 5ba | Transient Voltage supressor Vrwm=110V, Vbr=122..135V, Ipp=1.13A, 200W(1ms), Bidir. |
|
| PE | - | TV06B111J-G | Cmc | DO-214AA | 1d | Transient Voltage supressor Vrwm=110.0V, Vbr=122.0..135.0V, Ipp=3.39A, 600W(1ms) |
|
| pE | - | BU46L434G | Rhm | SSOP-3 | 16vda | Voltage Detector Integrated Circuit 4.3V±1%, -Reset PPO, Td=400ms |
|
| PE | - | 2SA1171-E | Ren | SOT-23 | 16ta | Silicon PNP Transistor AF, 90V, 50mA, 150mW, B=400..800, 200MHz |
|
| PE | - | BZX84C39T | Di | SOT-523 | 16dc | Zener Diode 37..41V, Zzt=130Ω, Izt=5mA, 150mW |
|
| PE | - | CZRH3-55C39 | Cmc | SOT-523 | 16dc | Zener Diode 39.0..41.0V, Zzt=130Ω, Izt=2mA, 150mW |
|
| PE | - | KRA105S | Kec | SOT-23 | 16ta | Silicon PNP Digital Transistor Sw, 50V, 100mA, 200mW, 200MHz, R1/R2=2k2/47k |
|
| PE | - | KRA305 | Kec | SOT-323 | 16ta | Silicon PNP Digital Transistor Sw, 50V, 100mA, 100mW, 200MHz, R1/R2=2k2/47k |
|
| PE | - | KRA305E | Kec | SOT-490 | 18ta | Silicon PNP Digital Transistor Sw, 50V, 100mA, 100mW, 200MHz, R1/R2=2k2/47k |
|
| PE | - | KRA305V | Kec | VSM | 18ta | Silicon PNP Digital Transistor Sw, 50V, 100mA, 100mW, 200MHz, R1/R2=2k2/47k |
|
| PE | - | LM4040B82IDC | Ti | SC-70 | 16dk | Voltage Reference Integrated Circuit µPower, Precision, Shunt, 8.192V±0.2% |
|
| PE | - | 2SJ207 | Nec | SOT-89 | 20fa | P-Channel MOSFET V-MOS, Sw, 16V, ±1A <1.5Ω(0.5A) |
|
| PE | - | R1114Q241B | Ric | SC-82AB | 26vn | Linear Voltage Regulator Integrated Circuit LDO, Low noise, 2.4V±2%, 150mA, +CE |
|
| PE | - | RP130Q441D | Ric | SC-82AB | 26vn | Linear Voltage Regulator Integrated Circuit LDO, LN, +CE, CL, 4.4V±1%, 150mA |
|
| PE | - | XC6127C24ENR | Tor | SSOT-24 | 26cr | Voltage Detector Integrated Circuit 2.4V±0.8%, -Reset PPO, -MR, Rt=800ms |
|
| PE | - | XC6218P15N | Tor | SSOT-24 | 26yr | Linear Voltage Regulator Integrated Circuit LDO, 1.5V±2%, 200mA |