Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Total Parts | 30/57 |
| Manufacturers | Richtek Technology Corp., Fagor Electronica, Tak Cheong Semiconductor Co., Ltd., PanJIT Semiconductor, Taiwan Semiconductor Company, Ltd., Vishay Semiconductor GmbH, Comchip Technology Corporation, Renessas (Hitachi and Mitsubishi) Ltd., Philips Hong Kong, Rohm Co., Ltd., Diodes Inc., Maxim Integrated Products, Panasonic (Matsushita) Electronics Corp., NXP Semiconductors (Philips), Philips GmbH, Bourns, Inc., TAITRON Components Incorporated, Zowie Technology Corporation, AUK Semiconductor Corp. |
| Functions | Zener Diode, Transient Voltage supressor, Silicon NPN Darlington Transistor with Internal Diode, Silicon PNP Transistor, Silicon NPN Transistor, Voltage Detector Integrated Circuit, Silicon PNP Digital Transistor |
| Cases | SOD-323, DO-214AC, SOT-523, DO-215AA, DO-214AA, SOD-323FL, SC-59, SOT-323F, SOT-523F, SOT-23, SOT-89, SOT-323, SOD-123FL, SOD-323F, SSOP-3 |
| Pins | 1ba, 1d, 18ta, 5ba, 16ta, 20tb, 16vdc, 7d, 5d |
| Description |
2.940..3.060V, Izt=5mA, 300mW 8.2V±2%, Izt=5mA, Zzt=10Ω, 375mW 43V±5%, Izt=2mA, Zzt=45Ω, 200mW Vrwm=75V, Irsm=4.9A, 600W(1ms), Bidir. 2.94..3.06V, Izt=5mA, Zzt=120Ω, 300mW Vbr=171..189V, Vrwm=154V, 1.7A, 400W(1ms) Vrwm=75V, Vbr=67.5..82.5V, 4.9A, 600W(1ms), Bidir. Vrwm=75V, Vbr=83.3..95.8V, 4.9A, 600W(1ms), Bidir. Vrwm=75V, Vbr=83.3..95.8V, 4.9A, 600W(1ms), Bidir. Vrwm=75V, Vbr=83.3..95.8V, 4.9A, 600W(1ms), Bidir. 32.15..33.79V, Izt=5mA, Zzt=100Ω, 200mW Vrwm=75.0V, Vbr=83.30..92.10V, Ipp=4.96A, 600W(1ms), Bidir. 32.15..33.79V, Izt=5mA, Zzt=100Ω, 200mW 32.15..33.79V, Izt=5mA, Zzt=100Ω, 200mW 3.7V±1%, -Reset ODO, Td=400ms 3.9V±1%, -Reset PPO GP, 60V, 150mA, 200mW, B=120..240, 100MHz GP, 60V, 500mA, 250mW, B=120..240, >120MHz GP, 60V, 500mA, 150mW, B=120..240, 20MHz GP, AF, 60V, 500mA, 200mW, B=120..240, 200MHz |
| SMD Code | A | Part Number | Manufacturer | Case | Pin | Description | |
|---|---|---|---|---|---|---|---|
| DR | - | BZT52B3V0WS | Ttr | SOD-323F | 7d | Zener Diode 2.940..3.060V, Izt=5mA, 300mW |
|
| DR | - | BZT52H-B8V2 | Phi | SOD-123FL | 7d | Zener Diode 8.2V±2%, Izt=5mA, Zzt=10Ω, 375mW |
|
| DR | - | BZX384-C43 | Nxp | SOD-323 | 5d | Zener Diode 43V±5%, Izt=2mA, Zzt=45Ω, 200mW |
|
| DR | - | CD214B-T75CA | Brn | DO-214AA | 1ba | Transient Voltage supressor Vrwm=75V, Irsm=4.9A, 600W(1ms), Bidir. |
|
| DR | - | MM3Z3B0H | Zow | SOD-323 | 5d | Zener Diode 2.94..3.06V, Izt=5mA, Zzt=120Ω, 300mW |
|
| DR | - | P4SMA180 | Fag | DO-214AC | 1d | Transient Voltage supressor Vbr=171..189V, Vrwm=154V, 1.7A, 400W(1ms) |
|
| DR | - | P6SMBJ75CA | Pjt | DO-214AA | 1ba | Transient Voltage supressor Vrwm=75V, Vbr=67.5..82.5V, 4.9A, 600W(1ms), Bidir. |
|
| DR | - | SMBG75CA | Vs | DO-215AA | 5ba | Transient Voltage supressor Vrwm=75V, Vbr=83.3..95.8V, 4.9A, 600W(1ms), Bidir. |
|
| DR | - | SMBJ75CA | Vs | DO-214AA | 1ba | Transient Voltage supressor Vrwm=75V, Vbr=83.3..95.8V, 4.9A, 600W(1ms), Bidir. |
|
| DR | - | SMBJ75CA | Di | DO-214AA | 1ba | Transient Voltage supressor Vrwm=75V, Vbr=83.3..95.8V, 4.9A, 600W(1ms), Bidir. |
|
| DR | - | TCUDZS33VB | Tac | SOD-323FL | 7d | Zener Diode 32.15..33.79V, Izt=5mA, Zzt=100Ω, 200mW |
|
| DR | - | TV06B750JB-G | Cmc | DO-214AA | 1ba | Transient Voltage supressor Vrwm=75.0V, Vbr=83.30..92.10V, Ipp=4.96A, 600W(1ms), Bidir. |
|
| DR | - | UDZS33B | Tsc | SOD-323FL | 7d | Zener Diode 32.15..33.79V, Izt=5mA, Zzt=100Ω, 200mW |
|
| DR | - | UDZS33VBW | Tac | SOD-123FL | 7d | Zener Diode 32.15..33.79V, Izt=5mA, Zzt=100Ω, 200mW |
|
| dR | - | BU45K374G | Rhm | SSOP-3 | 16vdc | Voltage Detector Integrated Circuit 3.7V±1%, -Reset ODO, Td=400ms |
|
| Dr | - | BD49K39G | Rhm | SSOP-3 | 16vdc | Voltage Detector Integrated Circuit 3.9V±1%, -Reset PPO |
|
| DR | - | 2PB1219AR | PhH | SOT-323 | 16ta | Silicon PNP Transistor GP, 60V, 150mA, 200mW, B=120..240, 100MHz |
|
| DR | - | 2PB710AR | Phi | SC-59 | 16ta | Silicon PNP Transistor GP, 60V, 500mA, 250mW, B=120..240, >120MHz |
|
| DR | - | 2SB1219A-R | Pan | SOT-323 | 16ta | Silicon PNP Transistor GP, 60V, 500mA, 150mW, B=120..240, 20MHz |
|
| DR | - | 2SB710A-R | Pan | SC-59 | 16ta | Silicon PNP Transistor GP, AF, 60V, 500mA, 200mW, B=120..240, 200MHz |
|
| DR | - | MAX809BMUR | Max | SOT-23 | 16vdc | Voltage Detector Integrated Circuit 4.38V±1.5%, -Reset PPO |
|
| DR | - | RT9809-40CV | Rct | SOT-23 | 16vdc | Voltage Detector Integrated Circuit 4.0V±2%, -Reset PPO |
|
| DR | - | SRA2211E | Auk | SOT-523 | 16ta | Silicon PNP Digital Transistor Sw, 50V, 100mA, 150mW, 200MHz, R1=10k |
|
| DR | - | SRA2211EF | Auk | SOT-523F | 18ta | Silicon PNP Digital Transistor Sw, 50V, 100mA, 150mW, 200MHz, R1=10k |
|
| DR | - | SRA2211U | Auk | SOT-323 | 16ta | Silicon PNP Digital Transistor Sw, 50V, 100mA, 200mW, 200MHz, R1=10k |
|
| DR | - | SRA2211UF | Auk | SOT-323F | 18ta | Silicon PNP Digital Transistor Sw, 50V, 100mA, 200mW, 200MHz, R1=10k |
|
| DR | - | SRA2212UF | Auk | SOT-323F | 18ta | Silicon PNP Digital Transistor Sw, 50V, 100mA, 200mW, 200MHz, R1=100k |
|
| DR | - | 2SB789-R | Pan | SOT-89 | 20tb | Silicon PNP Transistor AF-Drv, 100V, 1A, 1W, B=130..220, 120MHz |
|
| DR | - | 2SC4643 | Ren | SOT-89 | 20tb | Silicon NPN Transistor UHF, 15V, 50mA, 400mW, B=40..250, >5.5GHz |
|
| DR | - | 2SD2212 | Rhm | SOT-89 | 20tb | Silicon NPN Darlington Transistor with Internal Diode AF, 60V, 2A, B=1k..10k, 80MHz, Z-Di(B ->C) |