Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | ZXMN6A08GQTA |
| File Size | 858.88 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | ZXMN6A08GQTA, ZXMN6A08GQTC |
| Description | MOSFET N-CH 60VSOT223, MOSFETN-CH 60VSOT223 |
ZXMN6A08GQTA - Diodes Incorporated
The Products You May Be Interested In
 |
ZXMN6A08GQTA | Diodes Incorporated | MOSFET N-CH 60VSOT223 | 487 More on Order |
 |
ZXMN6A08GQTC | Diodes Incorporated | MOSFETN-CH 60VSOT223 | 396 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 80mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 459pF @ 40V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 80mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 459pF @ 40V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |