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ZXMN2A04DN8TC Datasheet

ZXMN2A04DN8TC Cover
DatasheetZXMN2A04DN8TC
File Size179.46 KB
Total Pages7
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts ZXMN2A04DN8TC, ZXMN2A04DN8TA
Description MOSFET 2N-CH 20V 5.9A 8SOIC, MOSFET 2N-CH 20V 5.9A 8-SOIC

ZXMN2A04DN8TC - Diodes Incorporated

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URL Link

ZXMN2A04DN8TC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.9A

Rds On (Max) @ Id, Vgs

25mOhm @ 5.9A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

22.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

1880pF @ 10V

Power - Max

1.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

ZXMN2A04DN8TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.9A

Rds On (Max) @ Id, Vgs

25mOhm @ 5.9A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

22.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

1880pF @ 10V

Power - Max

1.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO