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ZXMC10A816N8TC Datasheet

ZXMC10A816N8TC Cover
DatasheetZXMC10A816N8TC
File Size430.76 KB
Total Pages11
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts ZXMC10A816N8TC
Description MOSFET N/P-CH 100V 2A 8-SOIC

ZXMC10A816N8TC - Diodes Incorporated

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URL Link

ZXMC10A816N8TC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2A

Rds On (Max) @ Id, Vgs

230mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

497pF @ 50V

Power - Max

1.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP