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WPB4002-1E Datasheet

WPB4002-1E Cover
DatasheetWPB4002-1E
File Size251.55 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts WPB4002-1E, WPB4002
Description MOSFET N-CH 600V 23A TO3P3L, MOSFET N-CH 600V 23A TO3PB

WPB4002-1E - ON Semiconductor

WPB4002-1E Datasheet Page 1
WPB4002-1E Datasheet Page 2
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WPB4002-1E Datasheet Page 5

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URL Link

WPB4002-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 220W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P-3L

Package / Case

TO-3P-3, SC-65-3

WPB4002

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 220W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PB

Package / Case

TO-3P-3, SC-65-3