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VSSB410S-E3/5BT Datasheet

VSSB410S-E3/5BT Cover
DatasheetVSSB410S-E3/5BT
File Size89.21 KB
Total Pages4
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VSSB410S-E3/5BT, VSSB410S-E3/52T
Description DIODE SCHOTTKY 100V 1.9A DO214AA, DIODE SCHOTTKY 100V 1.9A DO214AA

VSSB410S-E3/5BT - Vishay Semiconductor Diodes Division

VSSB410S-E3/5BT Datasheet Page 1
VSSB410S-E3/5BT Datasheet Page 2
VSSB410S-E3/5BT Datasheet Page 3
VSSB410S-E3/5BT Datasheet Page 4

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VSSB410S-E3/5BT

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

1.9A

Voltage - Forward (Vf) (Max) @ If

770mV @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1.5µA @ 70V

Capacitance @ Vr, F

230pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-214AA, SMB

Supplier Device Package

DO-214AA (SMB)

Operating Temperature - Junction

-40°C ~ 150°C

VSSB410S-E3/52T

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

1.9A (DC)

Voltage - Forward (Vf) (Max) @ If

770mV @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

250µA @ 100V

Capacitance @ Vr, F

230pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-214AA, SMB

Supplier Device Package

DO-214AA (SMB)

Operating Temperature - Junction

-40°C ~ 150°C