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VS-GB75LP120N Datasheet

VS-GB75LP120N Cover
DatasheetVS-GB75LP120N
File Size119.26 KB
Total Pages7
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-GB75LP120N
Description IGBT 1200V 170A 658W INT-A-PAK

VS-GB75LP120N - Vishay Semiconductor Diodes Division

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VS-GB75LP120N VS-GB75LP120N Vishay Semiconductor Diodes Division IGBT 1200V 170A 658W INT-A-PAK 493

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URL Link

VS-GB75LP120N

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

-

Configuration

Single

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

170A

Power - Max

658W

Vce(on) (Max) @ Vge, Ic

1.82V @ 15V, 75A (Typ)

Current - Collector Cutoff (Max)

1mA

Input Capacitance (Cies) @ Vce

5.52nF @ 25V

Input

Standard

NTC Thermistor

No

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

INT-A-PAK (3 + 4)

Supplier Device Package

INT-A-PAK