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VS-GB150LH120N Datasheet

VS-GB150LH120N Cover
DatasheetVS-GB150LH120N
File Size134.01 KB
Total Pages6
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-GB150LH120N
Description IGBT 1200V 300A 1389W INT-A-PAK

VS-GB150LH120N - Vishay Semiconductor Diodes Division

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VS-GB150LH120N VS-GB150LH120N Vishay Semiconductor Diodes Division IGBT 1200V 300A 1389W INT-A-PAK 282

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VS-GB150LH120N

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

-

Configuration

Single

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

300A

Power - Max

1389W

Vce(on) (Max) @ Vge, Ic

1.87V @ 15V, 150A (Typ)

Current - Collector Cutoff (Max)

1mA

Input Capacitance (Cies) @ Vce

10.6nF @ 25V

Input

Standard

NTC Thermistor

No

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 4)

Supplier Device Package

Double INT-A-PAK