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VS-GB100TH120U Datasheet

VS-GB100TH120U Cover
DatasheetVS-GB100TH120U
File Size130.18 KB
Total Pages8
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-GB100TH120U
Description IGBT 1200V 200A 1136W INT-A-PAK

VS-GB100TH120U - Vishay Semiconductor Diodes Division

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VS-GB100TH120U VS-GB100TH120U Vishay Semiconductor Diodes Division IGBT 1200V 200A 1136W INT-A-PAK 513

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URL Link

VS-GB100TH120U

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

NPT

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

200A

Power - Max

1136W

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 100A

Current - Collector Cutoff (Max)

5mA

Input Capacitance (Cies) @ Vce

8.45nF @ 20V

Input

Standard

NTC Thermistor

No

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 4)

Supplier Device Package

Double INT-A-PAK