Top

VS-FB190SA10 Datasheet

VS-FB190SA10 Cover
DatasheetVS-FB190SA10
File Size312.56 KB
Total Pages9
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-FB190SA10
Description MOSFET N-CH 100V 190A SOT227

VS-FB190SA10 - Vishay Semiconductor Diodes Division

VS-FB190SA10 Datasheet Page 1
VS-FB190SA10 Datasheet Page 2
VS-FB190SA10 Datasheet Page 3
VS-FB190SA10 Datasheet Page 4
VS-FB190SA10 Datasheet Page 5
VS-FB190SA10 Datasheet Page 6
VS-FB190SA10 Datasheet Page 7
VS-FB190SA10 Datasheet Page 8
VS-FB190SA10 Datasheet Page 9

The Products You May Be Interested In

VS-FB190SA10 VS-FB190SA10 Vishay Semiconductor Diodes Division MOSFET N-CH 100V 190A SOT227 511

More on Order

URL Link

VS-FB190SA10

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

190A

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 180A, 10V

Vgs(th) (Max) @ Id

4.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10700pF @ 25V

FET Feature

-

Power Dissipation (Max)

568W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC