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VS-FB180SA10P Datasheet

VS-FB180SA10P Cover
DatasheetVS-FB180SA10P
File Size168.55 KB
Total Pages9
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-FB180SA10P
Description MOSFET N-CH 100V 180A SOT-227

VS-FB180SA10P - Vishay Semiconductor Diodes Division

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VS-FB180SA10P VS-FB180SA10P Vishay Semiconductor Diodes Division MOSFET N-CH 100V 180A SOT-227 157

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URL Link

VS-FB180SA10P

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 180A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10700pF @ 25V

FET Feature

-

Power Dissipation (Max)

480W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC