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VS-APU6006L-M3 Datasheet

VS-APU6006L-M3 Cover
DatasheetVS-APU6006L-M3
File Size171.55 KB
Total Pages8
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VS-APU6006L-M3, VS-EPU6006L-M3
Description DIODE GEN PURP 600V 60A TO247-3, DIODE GEN PURP 600V 30A TO247-2

VS-APU6006L-M3 - Vishay Semiconductor Diodes Division

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The Products You May Be Interested In

VS-APU6006L-M3 VS-APU6006L-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 60A TO247-3 456

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VS-EPU6006L-M3 VS-EPU6006L-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 30A TO247-2 280

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VS-APU6006L-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

FRED Pt®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

60A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 60A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

110ns

Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Operating Temperature - Junction

-65°C ~ 175°C

VS-EPU6006L-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

FRED Pt®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

2V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

45ns

Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-247-2

Supplier Device Package

TO-247AD

Operating Temperature - Junction

-65°C ~ 175°C