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VS-10ETF12FP-M3 Datasheet

VS-10ETF12FP-M3 Cover
DatasheetVS-10ETF12FP-M3
File Size226.46 KB
Total Pages8
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VS-10ETF12FP-M3, VS-10ETF10FP-M3
Description DIODE GEN PURP 1.2KV 10A TO220FP, DIODE GEN PURP 1KV 10A TO220FP

VS-10ETF12FP-M3 - Vishay Semiconductor Diodes Division

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The Products You May Be Interested In

VS-10ETF12FP-M3 VS-10ETF12FP-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 10A TO220FP 302

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VS-10ETF10FP-M3 VS-10ETF10FP-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 10A TO220FP 378

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URL Link

VS-10ETF12FP-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2 Full Pack

Supplier Device Package

TO-220-2 Full Pack

Operating Temperature - Junction

-40°C ~ 150°C

VS-10ETF10FP-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2 Full Pack

Supplier Device Package

TO-220-2 Full Pack

Operating Temperature - Junction

-40°C ~ 150°C