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| Datasheet | VQ1001P-E3 |
| File Size | 46.08 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | VQ1001P-E3, VQ1001P-2, VQ1001P |
| Description | MOSFET 4N-CH 30V 0.83A 14DIP, MOSFET 4N-CH 30V 0.83A 14DIP, MOSFET 4N-CH 30V 0.83A 14DIP |
VQ1001P-E3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series - FET Type 4 N-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 830mA Rds On (Max) @ Id, Vgs 1.75Ohm @ 200mA, 5V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case - Supplier Device Package 14-DIP |
Manufacturer Vishay Siliconix Series - FET Type 4 N-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 830mA Rds On (Max) @ Id, Vgs 1.75Ohm @ 200mA, 5V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case - Supplier Device Package 14-DIP |
Manufacturer Vishay Siliconix Series - FET Type 4 N-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 830mA Rds On (Max) @ Id, Vgs 1.75Ohm @ 200mA, 5V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case - Supplier Device Package 14-DIP |