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VB20120SG-M3/4W Datasheet

VB20120SG-M3/4W Cover
DatasheetVB20120SG-M3/4W
File Size97.11 KB
Total Pages4
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VB20120SG-M3/4W, VB20120SG-M3/8W
Description DIODE SCHOTTKY 20A 120V TO-263AB, DIODE SCHOTTKY 20A 120V TO-263AB

VB20120SG-M3/4W - Vishay Semiconductor Diodes Division

VB20120SG-M3/4W Datasheet Page 1
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VB20120SG-M3/4W Datasheet Page 4

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VB20120SG-M3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

120V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

250µA @ 120V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-55°C ~ 150°C

VB20120SG-M3/8W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

120V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

250µA @ 120V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-55°C ~ 150°C