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V8PAM10-M3/I Datasheet

V8PAM10-M3/I Cover
DatasheetV8PAM10-M3/I
File Size148.25 KB
Total Pages5
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts V8PAM10-M3/I, V8PAM10HM3/I
Description DIODE SCHOTTKY 100V 8A DO221BC, DIODE SCHOTTKY 100V 8A DO221BC

V8PAM10-M3/I - Vishay Semiconductor Diodes Division

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The Products You May Be Interested In

V8PAM10-M3/I V8PAM10-M3/I Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 8A DO221BC 268

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V8PAM10HM3/I V8PAM10HM3/I Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 8A DO221BC 307

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URL Link

V8PAM10-M3/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®, TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

780mV @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

200µA @ 100V

Capacitance @ Vr, F

810pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-221BC, SMA Flat Leads Exposed Pad

Supplier Device Package

DO-221BC (SMPA)

Operating Temperature - Junction

-40°C ~ 175°C

V8PAM10HM3/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, eSMP®, TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

780mV @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

200µA @ 100V

Capacitance @ Vr, F

810pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-221BC, SMA Flat Leads Exposed Pad

Supplier Device Package

DO-221BC (SMPA)

Operating Temperature - Junction

-40°C ~ 175°C