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UPA2816T1S-E2-AT Datasheet

UPA2816T1S-E2-AT Cover
DatasheetUPA2816T1S-E2-AT
File Size141.88 KB
Total Pages7
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts UPA2816T1S-E2-AT
Description MOSFET P-CH 30V 17A 8HWSON

UPA2816T1S-E2-AT - Renesas Electronics America

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URL Link

UPA2816T1S-E2-AT

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15.5mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

33.4nC @ 10V

Vgs (Max)

+20V, -25V

Input Capacitance (Ciss) (Max) @ Vds

1160pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HWSON (3.3x3.3)

Package / Case

8-PowerWDFN