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UPA2766T1A-E1-AY Datasheet

UPA2766T1A-E1-AY Cover
DatasheetUPA2766T1A-E1-AY
File Size143.38 KB
Total Pages7
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts UPA2766T1A-E1-AY, UPA2766T1A-E2-AY
Description MOSFET N-CH 30V 130A 8SON, MOSFET N-CH 30V 130A 8HVSON

UPA2766T1A-E1-AY - Renesas Electronics America

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UPA2766T1A-E1-AY UPA2766T1A-E1-AY Renesas Electronics America MOSFET N-CH 30V 130A 8SON 322

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UPA2766T1A-E2-AY UPA2766T1A-E2-AY Renesas Electronics America MOSFET N-CH 30V 130A 8HVSON 539

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URL Link

UPA2766T1A-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

130A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.82mOhm @ 39A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

257nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10850pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 83W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HVSON (5.4x5.15)

Package / Case

8-PowerVDFN

UPA2766T1A-E2-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.82mOhm @ 39A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

257nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10850pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 83W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HVSON (5.4x5.15)

Package / Case

8-PowerVDFN