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UNR422200A Datasheet

UNR422200A Cover
DatasheetUNR422200A
File Size295.12 KB
Total Pages6
ManufacturerPanasonic Electronic Components
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts UNR422200A, UNR422100A, UNR422400A, UNR422300A
Description TRANS PREBIAS NPN 300MW NS-B1, TRANS PREBIAS NPN 300MW NS-B1, TRANS PREBIAS NPN 300MW NS-B1, TRANS PREBIAS NPN 300MW NS-B1

UNR422200A - Panasonic Electronic Components

UNR422200A Datasheet Page 1
UNR422200A Datasheet Page 2
UNR422200A Datasheet Page 3
UNR422200A Datasheet Page 4
UNR422200A Datasheet Page 5
UNR422200A Datasheet Page 6

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URL Link

UNR422200A

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 100mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

200MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

3-SSIP

Supplier Device Package

NS-B1

UNR422100A

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 100mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

200MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

3-SSIP

Supplier Device Package

NS-B1

UNR422400A

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 100mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

200MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

3-SSIP

Supplier Device Package

NS-B1

UNR422300A

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 100mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

200MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

3-SSIP

Supplier Device Package

NS-B1