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UGE8JT-E3/45 Datasheet

UGE8JT-E3/45 Cover
DatasheetUGE8JT-E3/45
File Size78.69 KB
Total Pages4
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts UGE8JT-E3/45, UGE8HT-E3/45
Description DIODE GEN PURP 600V 8A TO220AC, DIODE GEN PURP 500V 8A TO220AC

UGE8JT-E3/45 - Vishay Semiconductor Diodes Division

UGE8JT-E3/45 Datasheet Page 1
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UGE8JT-E3/45 Datasheet Page 4

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UGE8HT-E3/45 UGE8HT-E3/45 Vishay Semiconductor Diodes Division DIODE GEN PURP 500V 8A TO220AC 414

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UGE8JT-E3/45

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

25ns

Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-55°C ~ 150°C

UGE8HT-E3/45

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

500V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

25ns

Current - Reverse Leakage @ Vr

30µA @ 500V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-55°C ~ 150°C