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| Datasheet | TT8U2TCR |
| File Size | 3,356.7 KB |
| Total Pages | 13 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | TT8U2TCR, TT8U2TR |
| Description | MOSFET P-CH 20V 2.4A TSST8, MOSFET P-CH 20V 2.4A TSST8 |
TT8U2TCR - Rohm Semiconductor
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 105mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.25W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSST Package / Case 8-SMD, Flat Lead |
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 105mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.25W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSST Package / Case 8-SMD, Flat Lead |