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TSM340N06CZ C0G Datasheet

TSM340N06CZ C0G Cover
DatasheetTSM340N06CZ C0G
File Size901.26 KB
Total Pages9
ManufacturerTaiwan Semiconductor Corporation
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts TSM340N06CZ C0G, TSM340N06CI C0G
Description MOSFET N-CHANNEL, MOSFET N-CHANNEL

TSM340N06CZ C0G - Taiwan Semiconductor Corporation

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URL Link

TSM340N06CZ C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

34mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1180pF @ 30V

FET Feature

-

Power Dissipation (Max)

66W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

TSM340N06CI C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

34mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1180pF @ 30V

FET Feature

-

Power Dissipation (Max)

27W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220

Package / Case

TO-220-3 Full Pack, Isolated Tab