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TSM1N45DCS RLG Datasheet

TSM1N45DCS RLG Cover
DatasheetTSM1N45DCS RLG
File Size558.55 KB
Total Pages8
ManufacturerTaiwan Semiconductor Corporation
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts TSM1N45DCS RLG
Description MOSFET N-CH 450V 500MA 8SOP

TSM1N45DCS RLG - Taiwan Semiconductor Corporation

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URL Link

TSM1N45DCS RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

500mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.25Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

4.9V @ 250mA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 10V

Vgs (Max)

±50V

Input Capacitance (Ciss) (Max) @ Vds

185pF @ 25V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)