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TSM160P04LCRHRLG Datasheet

TSM160P04LCRHRLG Cover
DatasheetTSM160P04LCRHRLG
File Size242.28 KB
Total Pages6
ManufacturerTaiwan Semiconductor Corporation
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts TSM160P04LCRHRLG
Description MOSFET P-CH 40V 51A 8PDFN

TSM160P04LCRHRLG - Taiwan Semiconductor Corporation

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URL Link

TSM160P04LCRHRLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2712pF @ 20V

FET Feature

-

Power Dissipation (Max)

69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN