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| Datasheet | TPCP8003-H(TE85L,F |
| File Size | 210.63 KB |
| Total Pages | 7 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TPCP8003-H(TE85L,F |
| Description | MOSFET N-CH 100V 2.2A PS-8 |
TPCP8003-H(TE85L,F - Toshiba Semiconductor and Storage
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URL Link
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 180mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 10V FET Feature - Power Dissipation (Max) 840mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PS-8 (2.9x2.4) Package / Case 8-SMD, Flat Lead |