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TPCC8006-H(TE12LQM Datasheet

TPCC8006-H(TE12LQM Cover
DatasheetTPCC8006-H(TE12LQM
File Size177.86 KB
Total Pages7
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts TPCC8006-H(TE12LQM
Description MOSFET N-CH 30V 22A 8TSON

TPCC8006-H(TE12LQM - Toshiba Semiconductor and Storage

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TPCC8006-H(TE12LQM TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON 318

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TPCC8006-H(TE12LQM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

22A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.3V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta), 27W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN