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TJ80S04M3L(T6L1 Datasheet

TJ80S04M3L(T6L1,NQ Cover
DatasheetTJ80S04M3L(T6L1,NQ
File Size237.39 KB
Total Pages9
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts TJ80S04M3L(T6L1,NQ
Description MOSFET P-CH 40V 80A DPAK-3

TJ80S04M3L(T6L1,NQ - Toshiba Semiconductor and Storage

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TJ80S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

158nC @ 10V

Vgs (Max)

+10V, -20V

Input Capacitance (Ciss) (Max) @ Vds

7770pF @ 10V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63