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TH58NVG2S3HTAI0 Datasheet

TH58NVG2S3HTAI0 Cover
DatasheetTH58NVG2S3HTAI0
File Size538.77 KB
Total Pages2
ManufacturerToshiba Memory America, Inc.
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts TH58NVG2S3HTAI0, TH58BVG2S3HTAI0, TH58NVG2S3HTA00
Description IC FLASH 4G PARALLEL 48TSOP I, IC FLASH 4G PARALLEL 48TSOP I, IC FLASH 4G PARALLEL 48TSOP I

TH58NVG2S3HTAI0 - Toshiba Memory America, Inc.

TH58NVG2S3HTAI0 Datasheet Page 1
TH58NVG2S3HTAI0 Datasheet Page 2

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URL Link

TH58NVG2S3HTAI0

Toshiba Memory America, Inc.

Manufacturer

Toshiba Memory America, Inc.

Series

-

Memory Type

Non-Volatile

Memory Format

FLASH

Technology

FLASH - NAND (SLC)

Memory Size

4Gb (512M x 8)

Memory Interface

Parallel

Clock Frequency

-

Write Cycle Time - Word, Page

25ns

Access Time

25ns

Voltage - Supply

2.7V ~ 3.6V

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Package / Case

48-TFSOP (0.724", 18.40mm Width)

Supplier Device Package

48-TSOP I

TH58BVG2S3HTAI0

Toshiba Memory America, Inc.

Manufacturer

Toshiba Memory America, Inc.

Series

Benand™

Memory Type

Non-Volatile

Memory Format

FLASH

Technology

FLASH - NAND (SLC)

Memory Size

4Gb (512M x 8)

Memory Interface

Parallel

Clock Frequency

-

Write Cycle Time - Word, Page

25ns

Access Time

25ns

Voltage - Supply

2.7V ~ 3.6V

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Package / Case

48-TFSOP (0.724", 18.40mm Width)

Supplier Device Package

48-TSOP I

TH58NVG2S3HTA00

Toshiba Memory America, Inc.

Manufacturer

Toshiba Memory America, Inc.

Series

-

Memory Type

Non-Volatile

Memory Format

FLASH

Technology

FLASH - NAND (SLC)

Memory Size

4Gb (512M x 8)

Memory Interface

Parallel

Clock Frequency

-

Write Cycle Time - Word, Page

25ns

Access Time

25ns

Voltage - Supply

2.7V ~ 3.6V

Operating Temperature

0°C ~ 70°C (TA)

Mounting Type

Surface Mount

Package / Case

48-TFSOP (0.724", 18.40mm Width)

Supplier Device Package

48-TSOP I