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SUP85N02-03-E3 Datasheet

SUP85N02-03-E3 Cover
DatasheetSUP85N02-03-E3
File Size70.79 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SUP85N02-03-E3
Description MOSFET N-CH 20V 85A TO220AB

SUP85N02-03-E3 - Vishay Siliconix

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URL Link

SUP85N02-03-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

3mOhm @ 30A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 2mA (Min)

Gate Charge (Qg) (Max) @ Vgs

200nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

21250pF @ 20V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3