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SUP75P05-08-E3 Datasheet

SUP75P05-08-E3 Cover
DatasheetSUP75P05-08-E3
File Size71.6 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SUP75P05-08-E3
Description MOSFET P-CH 55V 75A TO220-3

SUP75P05-08-E3 - Vishay Siliconix

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URL Link

SUP75P05-08-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8500pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3