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SUP40P10-43-GE3 Datasheet

SUP40P10-43-GE3 Cover
DatasheetSUP40P10-43-GE3
File Size101.83 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SUP40P10-43-GE3
Description MOSFET P-CH 100V 36A TO220AB

SUP40P10-43-GE3 - Vishay Siliconix

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SUP40P10-43-GE3 SUP40P10-43-GE3 Vishay Siliconix MOSFET P-CH 100V 36A TO220AB 360

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URL Link

SUP40P10-43-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

43mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 50V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3