Top

SUM70030E-GE3 Datasheet

SUM70030E-GE3 Cover
DatasheetSUM70030E-GE3
File Size190.47 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SUM70030E-GE3
Description MOSFET N-CHAN 100-V D2PAK (TO-26

SUM70030E-GE3 - Vishay Siliconix

SUM70030E-GE3 Datasheet Page 1
SUM70030E-GE3 Datasheet Page 2
SUM70030E-GE3 Datasheet Page 3
SUM70030E-GE3 Datasheet Page 4
SUM70030E-GE3 Datasheet Page 5
SUM70030E-GE3 Datasheet Page 6
SUM70030E-GE3 Datasheet Page 7
SUM70030E-GE3 Datasheet Page 8

The Products You May Be Interested In

SUM70030E-GE3 SUM70030E-GE3 Vishay Siliconix MOSFET N-CHAN 100-V D2PAK (TO-26 283

More on Order

URL Link

SUM70030E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

2.88mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

214nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10870pF @ 50V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB