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STY100NM60N Datasheet

STY100NM60N Cover
DatasheetSTY100NM60N
File Size810.24 KB
Total Pages13
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STY100NM60N
Description MOSFET N CH 600V 98A MAX247

STY100NM60N - STMicroelectronics

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URL Link

STY100NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

98A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

29mOhm @ 49A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

25V

Input Capacitance (Ciss) (Max) @ Vds

9600pF @ 50V

FET Feature

-

Power Dissipation (Max)

625W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

MAX247™

Package / Case

TO-247-3