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STW58N65DM2AG Datasheet

STW58N65DM2AG Cover
DatasheetSTW58N65DM2AG
File Size282.05 KB
Total Pages13
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STW58N65DM2AG
Description MOSFET N-CH 650V 48A

STW58N65DM2AG - STMicroelectronics

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URL Link

STW58N65DM2AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 100V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3