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STPSC8H065G2Y-TR Datasheet

STPSC8H065G2Y-TR Cover
DatasheetSTPSC8H065G2Y-TR
File Size416.08 KB
Total Pages12
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STPSC8H065G2Y-TR
Description AUTOMOTIVE-GRADE SILICON CARBIDE

STPSC8H065G2Y-TR - STMicroelectronics

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URL Link

STPSC8H065G2Y-TR

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, ECOPACK®2

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.65V @ 8A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

80µA @ 650V

Capacitance @ Vr, F

414pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK HV

Operating Temperature - Junction

-40°C ~ 175°C