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STP9N80K5 Datasheet

STP9N80K5 Cover
DatasheetSTP9N80K5
File Size791.26 KB
Total Pages16
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STP9N80K5, STW9N80K5
Description MOSFET N-CHANNEL 800V 7A TO220, MOSFET N-CHANNEL 800V 7A TO247

STP9N80K5 - STMicroelectronics

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STP9N80K5 STP9N80K5 STMicroelectronics MOSFET N-CHANNEL 800V 7A TO220 634

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STW9N80K5 STW9N80K5 STMicroelectronics MOSFET N-CHANNEL 800V 7A TO247 1609

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URL Link

STP9N80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ K5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

STW9N80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ K5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3