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STP80N6F6 Datasheet

STP80N6F6 Cover
DatasheetSTP80N6F6
File Size459.66 KB
Total Pages12
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STP80N6F6
Description MOSFET N-CH 60V TO-220

STP80N6F6 - STMicroelectronics

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URL Link

STP80N6F6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7480pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3