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STP6NK90ZFP Datasheet

STP6NK90ZFP Cover
DatasheetSTP6NK90ZFP
File Size653.58 KB
Total Pages26
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts STP6NK90ZFP, STB6NK90ZT4, STP6NK90Z
Description MOSFET N-CH 900V 5.8A TO-220FP, MOSFET N-CH 900V 5.8A D2PAK, MOSFET N-CH 900V 5.8A TO-220

STP6NK90ZFP - STMicroelectronics

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URL Link

STP6NK90ZFP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 2.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

60.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

STB6NK90ZT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 2.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

60.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STP6NK90Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 2.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

60.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3