Top

STP16N60M2 Datasheet

STP16N60M2 Cover
DatasheetSTP16N60M2
File Size439.61 KB
Total Pages16
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STP16N60M2, STU16N60M2
Description MOSFET N-CH 600V 12A TO-220AB, MOSFET N-CH 600V 12A IPAK

STP16N60M2 - STMicroelectronics

STP16N60M2 Datasheet Page 1
STP16N60M2 Datasheet Page 2
STP16N60M2 Datasheet Page 3
STP16N60M2 Datasheet Page 4
STP16N60M2 Datasheet Page 5
STP16N60M2 Datasheet Page 6
STP16N60M2 Datasheet Page 7
STP16N60M2 Datasheet Page 8
STP16N60M2 Datasheet Page 9
STP16N60M2 Datasheet Page 10
STP16N60M2 Datasheet Page 11
STP16N60M2 Datasheet Page 12
STP16N60M2 Datasheet Page 13
STP16N60M2 Datasheet Page 14
STP16N60M2 Datasheet Page 15
STP16N60M2 Datasheet Page 16

The Products You May Be Interested In

STP16N60M2 STP16N60M2 STMicroelectronics MOSFET N-CH 600V 12A TO-220AB 315

More on Order

STU16N60M2 STU16N60M2 STMicroelectronics MOSFET N-CH 600V 12A IPAK 4882

More on Order

URL Link

STP16N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

STU16N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA