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STL4N10F7 Datasheet

STL4N10F7 Cover
DatasheetSTL4N10F7
File Size634.25 KB
Total Pages14
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STL4N10F7
Description MOSFET N-CH 100V 4.5A 8PWRFLAT

STL4N10F7 - STMicroelectronics

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URL Link

STL4N10F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 2.25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

408pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.9W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (3.3x3.3)

Package / Case

8-PowerVDFN