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STI35N65M5 Datasheet

STI35N65M5 Cover
DatasheetSTI35N65M5
File Size1,273.21 KB
Total Pages22
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 5 part numbers
Associated Parts STI35N65M5, STP35N65M5, STW35N65M5, STF35N65M5, STB35N65M5
Description MOSFET N-CH 650V 27A I2PAK, MOSFET N-CH 650V 27A TO-220, MOSFET N-CH 650V 27A TO-247, MOSFET N-CH 650V 27A TO-220FP, MOSFET N-CH 650V 27A D2PAK

STI35N65M5 - STMicroelectronics

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STP35N65M5 STP35N65M5 STMicroelectronics MOSFET N-CH 650V 27A TO-220 375

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STW35N65M5 STW35N65M5 STMicroelectronics MOSFET N-CH 650V 27A TO-247 1905

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STF35N65M5 STF35N65M5 STMicroelectronics MOSFET N-CH 650V 27A TO-220FP 989

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STB35N65M5 STB35N65M5 STMicroelectronics MOSFET N-CH 650V 27A D2PAK 2185

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URL Link

STI35N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

98mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 100V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

STP35N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

98mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 100V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STW35N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

98mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 100V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

STF35N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

98mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 100V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

STB35N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

98mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 100V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB