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STI18N65M2 Datasheet

STI18N65M2 Cover
DatasheetSTI18N65M2
File Size525.3 KB
Total Pages15
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STI18N65M2, STP18N65M2
Description MOSFET N-CH 650V 12A I2PAK, MOSFET N-CH 650V 12A TO220

STI18N65M2 - STMicroelectronics

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URL Link

STI18N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

STP18N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3