Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STFW60N65M5 |
| File Size | 978.57 KB |
| Total Pages | 16 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STFW60N65M5, STW60N65M5 |
| Description | MOSFET N-CH TO-3PF/ISOWATT 218, MOSFET N-CH 650V 46A TO-247 |
STFW60N65M5 - STMicroelectronics
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Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 59mOhm @ 23A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 6810pF @ 100V FET Feature - Power Dissipation (Max) 79W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOWATT-218FX Package / Case ISOWATT218FX |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 59mOhm @ 23A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 6810pF @ 100V FET Feature - Power Dissipation (Max) 255W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |