Top

STFI28N60M2 Datasheet

STFI28N60M2 Cover
DatasheetSTFI28N60M2
File Size883.56 KB
Total Pages15
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STFI28N60M2, STF28N60M2
Description MOSFET N-CH 600V 22A I2PAK-FP, MOSFET N-CH 600V 24A TO220FP

STFI28N60M2 - STMicroelectronics

STFI28N60M2 Datasheet Page 1
STFI28N60M2 Datasheet Page 2
STFI28N60M2 Datasheet Page 3
STFI28N60M2 Datasheet Page 4
STFI28N60M2 Datasheet Page 5
STFI28N60M2 Datasheet Page 6
STFI28N60M2 Datasheet Page 7
STFI28N60M2 Datasheet Page 8
STFI28N60M2 Datasheet Page 9
STFI28N60M2 Datasheet Page 10
STFI28N60M2 Datasheet Page 11
STFI28N60M2 Datasheet Page 12
STFI28N60M2 Datasheet Page 13
STFI28N60M2 Datasheet Page 14
STFI28N60M2 Datasheet Page 15

The Products You May Be Interested In

STFI28N60M2 STFI28N60M2 STMicroelectronics MOSFET N-CH 600V 22A I2PAK-FP 1287

More on Order

STF28N60M2 STF28N60M2 STMicroelectronics MOSFET N-CH 600V 24A TO220FP 1775

More on Order

URL Link

STFI28N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1440pF @ 100V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAKFP (TO-281)

Package / Case

TO-262-3 Full Pack, I²Pak

STF28N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 100V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack