Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STFI11N65M2 |
| File Size | 735.39 KB |
| Total Pages | 15 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STFI11N65M2, STF11N65M2 |
| Description | MOSFET N-CH 650V 7A I2PAKFP, MOSFET N-CH 650V 7A TO-220FP |
STFI11N65M2 - STMicroelectronics
The Products You May Be Interested In
 |
STFI11N65M2 | STMicroelectronics | MOSFET N-CH 650V 7A I2PAKFP | 216 More on Order |
 |
STF11N65M2 | STMicroelectronics | MOSFET N-CH 650V 7A TO-220FP | 840 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 410pF @ 100V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAKFP (TO-281) Package / Case TO-262-3 Full Pack, I²Pak |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 410pF @ 100V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |