Top

STF10N62K3 Datasheet

STF10N62K3 Cover
DatasheetSTF10N62K3
File Size948.52 KB
Total Pages17
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts STF10N62K3, STP10N62K3, STI10N62K3, STFI10N62K3
Description MOSFET N-CH 620V 8.4A TO-220FP, MOSFET N-CH 620V 8.4A TO220, MOSFET N-CH 620V 8.4A I2PAK, MOSFET N CH 620V 8.4A I2PAKFP

STF10N62K3 - STMicroelectronics

STF10N62K3 Datasheet Page 1
STF10N62K3 Datasheet Page 2
STF10N62K3 Datasheet Page 3
STF10N62K3 Datasheet Page 4
STF10N62K3 Datasheet Page 5
STF10N62K3 Datasheet Page 6
STF10N62K3 Datasheet Page 7
STF10N62K3 Datasheet Page 8
STF10N62K3 Datasheet Page 9
STF10N62K3 Datasheet Page 10
STF10N62K3 Datasheet Page 11
STF10N62K3 Datasheet Page 12
STF10N62K3 Datasheet Page 13
STF10N62K3 Datasheet Page 14
STF10N62K3 Datasheet Page 15
STF10N62K3 Datasheet Page 16
STF10N62K3 Datasheet Page 17

The Products You May Be Interested In

STF10N62K3 STF10N62K3 STMicroelectronics MOSFET N-CH 620V 8.4A TO-220FP 472

More on Order

STP10N62K3 STP10N62K3 STMicroelectronics MOSFET N-CH 620V 8.4A TO220 1662

More on Order

STI10N62K3 STI10N62K3 STMicroelectronics MOSFET N-CH 620V 8.4A I2PAK 1945

More on Order

STFI10N62K3 STFI10N62K3 STMicroelectronics MOSFET N CH 620V 8.4A I2PAKFP 2198

More on Order

URL Link

STF10N62K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 50V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

STP10N62K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STI10N62K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

STFI10N62K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 50V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAKFP (TO-281)

Package / Case

TO-262-3 Full Pack, I²Pak