Top

STB42N60M2-EP Datasheet

STB42N60M2-EP Cover
DatasheetSTB42N60M2-EP
File Size380.67 KB
Total Pages20
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP
Description MOSFET N-CH 600V 34A EP D2PAK, MOSFET N-CH 600V 34A EP TO220AB, MOSFET N-CH 600V 34A EP TO247

STB42N60M2-EP - STMicroelectronics

STB42N60M2-EP Datasheet Page 1
STB42N60M2-EP Datasheet Page 2
STB42N60M2-EP Datasheet Page 3
STB42N60M2-EP Datasheet Page 4
STB42N60M2-EP Datasheet Page 5
STB42N60M2-EP Datasheet Page 6
STB42N60M2-EP Datasheet Page 7
STB42N60M2-EP Datasheet Page 8
STB42N60M2-EP Datasheet Page 9
STB42N60M2-EP Datasheet Page 10
STB42N60M2-EP Datasheet Page 11
STB42N60M2-EP Datasheet Page 12
STB42N60M2-EP Datasheet Page 13
STB42N60M2-EP Datasheet Page 14
STB42N60M2-EP Datasheet Page 15
STB42N60M2-EP Datasheet Page 16
STB42N60M2-EP Datasheet Page 17
STB42N60M2-EP Datasheet Page 18
STB42N60M2-EP Datasheet Page 19
STB42N60M2-EP Datasheet Page 20

The Products You May Be Interested In

STB42N60M2-EP STB42N60M2-EP STMicroelectronics MOSFET N-CH 600V 34A EP D2PAK 252

More on Order

STP42N60M2-EP STP42N60M2-EP STMicroelectronics MOSFET N-CH 600V 34A EP TO220AB 736

More on Order

STW42N60M2-EP STW42N60M2-EP STMicroelectronics MOSFET N-CH 600V 34A EP TO247 1590

More on Order

URL Link

STB42N60M2-EP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2-EP

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

87mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2370pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STP42N60M2-EP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2-EP

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

87mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2370pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

STW42N60M2-EP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2-EP

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

87mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2370pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3