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STB18N60M6 Datasheet

STB18N60M6 Cover
DatasheetSTB18N60M6
File Size627.08 KB
Total Pages16
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STB18N60M6
Description N-CHANNEL 600 V, 105 MOHM TYP.,

STB18N60M6 - STMicroelectronics

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STB18N60M6 STB18N60M6 STMicroelectronics N-CHANNEL 600 V, 105 MOHM TYP., 187

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URL Link

STB18N60M6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB